PART |
Description |
Maker |
CAT22C12P-20 CAT22C12P-30 CAT22C12PI-30 CAT22C12PI |
NVRAM (EEPROM Based) NVRAM中(EEPROM的基础
|
ITT, Corp.
|
U632H64BDC45 U632H64BD1C45 U632H64BSC45 U632H64DC4 |
Precision single operational amplifier NVRAM (EEPROM Based) NVRAM中(EEPROM的基础
|
Glenair, Inc.
|
DS1745Y-150-IND DS1745YLPM-150-IND |
NVRAM (Battery Based) NVRAM中(基于电池
|
Maxim Integrated Products, Inc.
|
FM1208-100DC FM1208-150PC |
NVRAM (Ferroelectric Based) NVRAM中(基于铁电
|
Samtec, Inc. Ramtron International, Corp.
|
DS1345YL-70 DS1345YL-70-IND DS1345BL-70 DS1345BL-7 |
NVRAM (Battery Based) NVRAM中(基于电池
|
Cypress Semiconductor, Corp.
|
DS1250Y-70 DS1250Y-70-IND DS1250Y-100-IND DS1250AB |
NVRAM (Battery Based) From old datasheet system NOVRAM,512KX8,CMOS,DIP,32PIN,PLASTIC
|
Dallas Semiconductor Corp
|
M40Z30005 M40Z300MH6TR M40Z300MQ6TR M40Z300WMH6TR |
NVRAM CONTROLLER FOR UP TO EIGHT LPSRAM 5V or 3V NVRAM Supervisor for Up to 8 LPSRAMs 5VV NVRAM中监多达8LPSRAMs
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics] 意法半导 STMicroelectronics N.V.
|
M40Z111 M40Z111MH6 M40Z111MH6TR M40Z111WMH6 M40Z11 |
NVRAM CONTROLLER FOR UP TO TWO LPSRAM 5V OR 3V NVRAM SUPERVISOR FOR UP TO TWO LPSRAMs
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics] 意法半导
|
STK10C48-5P35 STK10C48-5P35I STK10C48-5P30 STK10C4 |
NVRAM (EEPROM Based) Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):10A; Gate Trigger Current (QI), Igt:50mA; Package/Case:3-TO-220; Current, It av:10A; Holding Current:50mA Triac; Thyristor Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):10A; Gate Trigger Current (QI), Igt:50mA; Current, It av:10A; Gate Trigger Current Max, Igt:50mA; Holding Current:50mA RoHS Compliant: Yes Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):15A; Gate Trigger Current (QI), Igt:50mA; Package/Case:3-TO-220; Current, It av:15A; Holding Current:70mA Triac; Thyristor Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):16A; Gate Trigger Current (QI), Igt:20mA; Current, It av:16A; Gate Trigger Current Max, Igt:20mA; Holding Current:35mA RoHS Compliant: Yes Triac; Triac Type:Internally Triggered; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):15A; Gate Trigger Current (QI), Igt:25uA; Package/Case:TO-220; Gate Trigger Current Max, Igt:1.5A Triac; Triac Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):16A; Gate Trigger Current (QI), Igt:35mA; Package/Case:3-TO-220; Current, It av:16A; Gate Trigger Current Max, Igt:35mA Triac; Triac Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):16A; Gate Trigger Current (QI), Igt:80mA; Package/Case:3-TO-220; Current, It av:16A; Gate Trigger Current Max, Igt:80mA Triac; Triac Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):10A; Gate Trigger Current (QI), Igt:50mA; Package/Case:3-TO-220; Current, It av:10A; Gate Trigger Current Max, Igt:50mA NVRAM中(EEPROM的基础 Triac; Triac Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):12A; Gate Trigger Current (QI), Igt:50mA; Package/Case:3-TO-220; Current, It av:12A; Gate Trigger Current Max, Igt:50mA NVRAM中(EEPROM的基础
|
Atmel, Corp.
|
M68HC711CFD M68HC711CFG M68HC711CFG_D M68HC711CFG/ |
CONFIG Register Programming for EEPROM-based M68HC11 Microcontrollers CONFIG REGISTER PROGRAMMING FOR EEPROM-BASED MHC MICROCONTROLLERS
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MOTOROLA[Motorola, Inc] MOTOROLA[Motorola Inc] Motorola, Inc. Freescale (Motorola)
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